Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.
نویسندگان
چکیده
Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.
منابع مشابه
Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphizat...
متن کاملابررساناهای دمای بالا- با دید نوترونها
Neutron scattering is proved to be a vital probe in unveiling the magnetic properties of high temperature superconductors (HTSC). Detailed information about the energy and momentum dependence of the magnetic dynamics of HTSC have been obtained directly by this technique. Over the past decade by improving the crystal growth methods, large and high quality single crystals of HTSC, which are ess...
متن کاملMechanical Properties of Amorphous Silicon Carbide
Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, structural component in fusion reactors, cladding material for gas-cooled fission reactors, and an inert matrix for the transmutation of Pu(Katoh, Y. et al., 2007; Snead, L. L. et al., 20...
متن کاملEffect of Impurities on the Raman Scattering of 6H-SiC Crystals
Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Aland B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be ind...
متن کاملMorphology of Amorphous Pockets in SiC Irradiated with 1 MeV Kr Ions
Radiation-induced amorphization is one of the concerns with SiC as structural components for next-generation nuclear reactors. Numerous studies have been focused on the amorphization mechanisms under electron, neutron, and ion irradiation. Proposed mechanisms for ion-induced amorphization include nucleation and growth of amorphous regions, direct impact combined with stimulated amorphization at...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 106 8 شماره
صفحات -
تاریخ انتشار 2011