Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

نویسندگان

  • Yu Liu
  • Gang Wang
  • Shunchong Wang
  • Jianhui Yang
  • Liang Chen
  • Xiubo Qin
  • Bo Song
  • Baoyi Wang
  • Xiaolong Chen
چکیده

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

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عنوان ژورنال:
  • Physical review letters

دوره 106 8  شماره 

صفحات  -

تاریخ انتشار 2011